High power RF LDMOS FET for demanding applications. Features 220W output power at 920-960MHz, with a 65V drain-to-source breakdown voltage and 1.85A continuous drain current. Operates from a 30V supply voltage and offers 18.5dB gain. Designed for surface mount with screw mounting capability, this N-CHANNEL MOSFET is halogen-free, lead-free, and RoHS compliant, operating from -40°C to 150°C.
Frequency960MHz
Voltage Rating65V
Current Rating10uA
MountingSurface Mount, Screw
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Technical Specifications
Infineon PTFA092201E V4 technical specifications.
General
| Continuous Drain Current (ID) | 1.85A |
| Current Rating | 10uA |
| Drain to Source Breakdown Voltage | 65V |
| Frequency | 960MHz |
| Gain | 18.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 960MHz |
| Min Frequency | 920MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Power | 55W |
| Max Power Dissipation | 700W |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Operating Supply Voltage | 30V |
| Output Power | 220W |
| Package Quantity | 35 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 30V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon PTFA092201E V4 Datasheet
Download the complete datasheet for Infineon PTFA092201E V4 to view detailed technical specifications.
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