The SGB15N60HSATMA1 is a 600V insulated gate bipolar transistor (IGBT) from Infineon, packaged in a TO-263-3 surface mount package. It can handle a maximum collector current of 27A and has a maximum power dissipation of 138W. The device operates within a temperature range of -55°C to 150°C. It is available in tape and reel packaging and is not radiation hardened.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon SGB15N60HSATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3.15V |
| Input Type | STANDARD |
| Max Collector Current | 27A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 138W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SGB15N60HSATMA1 Datasheet
Download the complete datasheet for Infineon SGB15N60HSATMA1 to view detailed technical specifications.
No datasheet is available for this part.