The SGP02N120XK is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 6.2A. It is packaged in a TO-220 case and is designed for through hole mounting. The device is rated for operation between -55°C and 150°C. It is compliant with RoHS regulations and is not radiation hardened.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon SGP02N120XK technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 6.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SGP02N120XK Datasheet
Download the complete datasheet for Infineon SGP02N120XK to view detailed technical specifications.
No datasheet is available for this part.