The SGP02N120XKSA1 is a TO-220-3 flange mount insulated gate bipolar transistor (IGBT) from Infineon, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 6.2A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 62W. The device is compliant with RoHS regulations and is packaged in a rail/Tube with 500 units per package.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.6V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Type | STANDARD |
| Length | 10mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 6.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Weight | 0.211644oz |
| Width | 4.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SGP02N120XKSA1 to view detailed technical specifications.
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