The SKB15N60E8151 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 600V and a maximum collector current of 31A. It has a maximum power dissipation of 139W and is packaged in a TO-263-3 surface mount package. The transistor operates within a temperature range of -55°C to 150°C and is not RoHS compliant. It is available in quantities of 1000 on tape and reel.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon SKB15N60E8151 technical specifications.
General
| Package/Case | TO-263-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 31A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Reverse Recovery Time | 279ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SKB15N60E8151 Datasheet
Download the complete datasheet for Infineon SKB15N60E8151 to view detailed technical specifications.
No datasheet is available for this part.