The SKW20N60HSFKSA1 is an insulated gate bipolar transistor from Infineon with a collector-emitter breakdown voltage of 600V and a maximum collector current of 36A. It has a maximum power dissipation of 178W and is packaged in a TO-247-3 package. The transistor operates within a temperature range of -55°C to 150°C and is RoHS compliant. It is available in a lead-free package and has a reverse recovery time of 130ns.
PackageTO-247-3
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Technical Specifications
Infineon SKW20N60HSFKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 3.15V |
| Halogen Free | Not Halogen Free |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 36A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 178W |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 130ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SKW20N60HSFKSA1 Datasheet
Download the complete datasheet for Infineon SKW20N60HSFKSA1 to view detailed technical specifications.
No datasheet is available for this part.