Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity, designed for small signal applications. This silicon transistor offers a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. With a transition frequency of 100MHz and a minimum hFE of 100, it is suitable for a wide operating temperature range from -65°C to 150°C. The component is RoHS compliant and packaged in tape and reel.
Frequency100MHz
PackageSC
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Infineon SMBTA06UPNE6327HTSA1 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Halogen Free | Not Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SMBTA06UPNE6327HTSA1 Datasheet
Download the complete datasheet for Infineon SMBTA06UPNE6327HTSA1 to view detailed technical specifications.
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