Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity, designed for small signal applications. This silicon transistor offers a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. With a transition frequency of 100MHz and a minimum hFE of 100, it is suitable for a wide operating temperature range from -65°C to 150°C. The component is RoHS compliant and packaged in tape and reel.
Sign in to ask questions about the Infineon SMBTA06UPNE6327HTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon SMBTA06UPNE6327HTSA1 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 100MHz |
| Halogen Free | Not Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
Download the complete datasheet for Infineon SMBTA06UPNE6327HTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
