
The SMBTA14E6327HTSA1 is a surface mount NPN transistor from Infineon, packaged in a SOT-23 case. It has a collector-emitter breakdown voltage of 30V and a maximum collector current of 300mA. The device is rated for a maximum power dissipation of 330mW and operates over a temperature range of -65°C to 150°C. It is RoHS compliant and available in tape and reel packaging.
Sign in to ask questions about the Infineon SMBTA14E6327HTSA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon SMBTA14E6327HTSA1 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 10V |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon SMBTA14E6327HTSA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
