The SPA04N50C3 is a N-channel MOSFET with a continuous drain current rating of 4.5A and a drain to source breakdown voltage of 500V. It features a drain to source resistance of 950mR and an input capacitance of 470pF. The device is packaged in a TO-220-3 package and is compliant with RoHS regulations. It has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 31W.
PackageTO-220-3
Current Rating4.5A
PolarityN-CHANNEL
Power31W
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Technical Specifications
Infineon SPA04N50C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 560V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA04N50C3 Datasheet
Download the complete datasheet for Infineon SPA04N50C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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