SPA04N50C3

Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULL PACK-3

PackageTO-220-3

Current Rating4.5A

PolarityN-CHANNEL

Power31W

Quick Jump:

Infineon SPA04N50C3 technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	4.5A
Current Rating	4.5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	950mR
Drain to Source Voltage (Vdss)	560V
Fall Time	10ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	470pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	31W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	31W
Rds On Max	950mR
RoHS Compliant	Yes
Series	CoolMOS™
Turn-Off Delay Time	70ns
Turn-On Delay Time	10ns
DC Rated Voltage	560V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.