N-Channel Power MOSFET featuring 650V drain-source voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 380mΩ Rds On and a maximum power dissipation of 33W. Designed for high-efficiency switching applications, it operates across a wide temperature range from -55°C to 150°C. Available in TO-220AB and TO-220FP packages, this component is RoHS and Halogen Free compliant.
PackageTO-220-3
Current Rating11A
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Technical Specifications
Infineon SPA11N60C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.83mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.65mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 650V |
| Width | 4.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPA11N60C3 Datasheet
Download the complete datasheet for Infineon SPA11N60C3 to view detailed technical specifications.
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