N-Channel Power MOSFET featuring 800V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 290mΩ Rds On and a maximum power dissipation of 42W. Designed for high-efficiency switching applications, it boasts fast switching speeds with a 25ns turn-on delay and 6ns fall time. Packaged in a TO-220-3 configuration, this component is RoHS and Halogen Free compliant, operating across a wide temperature range from -55°C to 150°C.
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Infineon SPA17N80C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.808mm |
| Input Capacitance | 2.32nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| Width | 4.826mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPA17N80C3 to view detailed technical specifications.
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