The SPB04N60S5ATMA1 is a 600V power MOSFET from Infineon with a maximum continuous drain current of 4.5A. It features a TO-263-3 package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 50W. It is compliant with RoHS regulations and is part of the CoolMOS series.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Infineon SPB04N60S5ATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 580pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB04N60S5ATMA1 Datasheet
Download the complete datasheet for Infineon SPB04N60S5ATMA1 to view detailed technical specifications.
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