The SPB10N10G is a SIPMOS transistor from Infineon, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 50W and a maximum drain to source voltage of 100V. The transistor is packaged in a TO-263-3 package and is lead free. It has a maximum continuous drain current of 10.3A and a maximum Rds on of 170mR.
PackageTO-263-3
Current Rating10.3A
MountingSurface Mount
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Technical Specifications
Infineon SPB10N10G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10.3A |
| Current Rating | 10.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 426pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Rds On Max | 170mR |
| Series | SIPMOS® |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPB10N10G Datasheet
Download the complete datasheet for Infineon SPB10N10G to view detailed technical specifications.
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