SPB10N10LG

Name: SPB10N10LG Infineon
Brand: Infineon
SKU: SPB10N10LG

Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

Current Rating-10.3A

MountingSurface Mount

PolarityN-CHANNEL

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Infineon SPB10N10LG technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	10.3A
Current Rating	-10.3A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	154mR
Drain to Source Voltage (Vdss)	100V
Fall Time	17.8ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	444pF
Lead Free	Lead Free
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	50W
Mount	Surface Mount
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	50W
Rds On Max	154mR
RoHS Compliant	Yes
Series	SIPMOS®
Turn-Off Delay Time	27.8ns
DC Rated Voltage	-100V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.