The SPB10N10LG is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 50W and a drain to source breakdown voltage of 100V. The device has a continuous drain current of 10.3A and a drain to source resistance of 154mR. It is lead free and RoHS compliant, packaged in a TO-263-3 case and available on tape and reel.
PackageTO-263-3
Current Rating-10.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon SPB10N10LG technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10.3A |
| Current Rating | -10.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 154mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 444pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 154mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 27.8ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPB10N10LG Datasheet
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