N-Channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. Offers a low on-resistance of 0.38 ohms. This single-element silicon device utilizes a Metal-oxide Semiconductor Field-Effect Transistor structure. Packaged in a TO-263AB green plastic housing with 4 pins, it operates up to a maximum temperature of 150°C.
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Infineon SPB11N60C3ATMA1 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 4 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | not_compliant |
| Military Spec | False |
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