Infineon
SPB18P06PGATMA1
Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN-FREE, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
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Technical Specifications
Infineon SPB18P06PGATMA1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon SPB18P06PGATMA1 Datasheet
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