Infineon
SPB35N10
Power Field-Effect Transistor, 35A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
Power Field-Effect Transistor, 35A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
PackageTO-263-3
Current Rating35A
MountingSurface Mount
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Technical Specifications
Infineon SPB35N10 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 1.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Rds On Max | 44mR |
| RoHS Compliant | No |
| Series | SIPMOS® |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPB35N10 Datasheet
Download the complete datasheet for Infineon SPB35N10 to view detailed technical specifications.
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