Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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Infineon SPB80N06S2-08 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 3.8nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| DC Rated Voltage | 55V |
| RoHS | Not Compliant |
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