N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 2A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 2.7 ohm drain-to-source resistance. Designed for efficient switching, it exhibits a 25ns turn-on delay and 18ns fall time. The component is housed in a TO-252-3 package, rated for 42W maximum power dissipation, and operates within a temperature range of -55°C to 150°C.
PackageTO-252-3
Current Rating2A
PolarityN-CHANNEL
Power42W
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Technical Specifications
Infineon SPD02N80C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
2A
Current Rating
2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
2.7R
Drain to Source Voltage (Vdss)
800V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
290pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
2.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
DC Rated Voltage
800V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD02N80C3 Datasheet
Download the complete datasheet for Infineon SPD02N80C3 to view detailed technical specifications.
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