N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 2A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 2.7 ohm drain-to-source resistance. Designed for efficient switching, it exhibits a 25ns turn-on delay and 18ns fall time. The component is housed in a TO-252-3 package, rated for 42W maximum power dissipation, and operates within a temperature range of -55°C to 150°C.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| Width | 6.22mm |
| RoHS | Compliant |
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