Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN
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Infineon SPD02N80C3BTMA1 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 290pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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