N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm Rds On and 150°C maximum operating temperature. Designed for efficient switching with fast turn-on (7ns) and fall (12ns) times, it operates within a -55°C to 150°C temperature range. Packaged in a TO-252AA (DPAK-3) surface-mount plastic package, this RoHS compliant component is ideal for power applications.
PackageTO-252-3
Current Rating3.2A
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon SPD03N60C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.2A
Current Rating
3.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
650V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
2.413mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
38W
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
64ns
Turn-On Delay Time
7ns
DC Rated Voltage
650V
Width
6.223mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD03N60C3 Datasheet
Download the complete datasheet for Infineon SPD03N60C3 to view detailed technical specifications.
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