
N-Channel Power MOSFET, 500V DC Rated Voltage, 4.5A Continuous Drain Current. Features 0.95ohm Rds On Max, 470pF Input Capacitance, and 10ns Turn-On Delay Time. Operates from -55°C to 150°C with 50W Max Power Dissipation. Packaged in a TO-252-3 SMD/SMT plastic package, this RoHS compliant component offers a 20V Gate to Source Voltage.
Infineon SPD04N50C3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Dual Supply Voltage | 560V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPD04N50C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
