N-Channel Power MOSFET featuring 600V drain-source voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low Rds On of 950mΩ and a maximum power dissipation of 50W. Designed for high-frequency switching, it exhibits fast switching speeds with a turn-on delay time of 6ns and a fall time of 9.5ns. Encased in a TO-252-3 (DPAK) package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-252-3
Voltage600V
Current46A
Current Rating4.5A
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Technical Specifications
Infineon SPD04N60C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.5A
Current
46A
Current Rating
4.5A
Drain to Source Voltage (Vdss)
600V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
490pF
Lead Free
Contains Lead
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
950mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
58.5ns
Turn-On Delay Time
6ns
Voltage
600V
DC Rated Voltage
650V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04N60C3 Datasheet
Download the complete datasheet for Infineon SPD04N60C3 to view detailed technical specifications.
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