N-Channel Power MOSFET featuring 600V drain-source voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low Rds On of 950mΩ and a maximum power dissipation of 50W. Designed for high-frequency switching, it exhibits fast switching speeds with a turn-on delay time of 6ns and a fall time of 9.5ns. Encased in a TO-252-3 (DPAK) package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-252-3
Voltage600V
Current46A
Current Rating4.5A
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Technical Specifications
Infineon SPD04N60C3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current | 46A |
| Current Rating | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 490pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 58.5ns |
| Turn-On Delay Time | 6ns |
| Voltage | 600V |
| DC Rated Voltage | 650V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD04N60C3 Datasheet
Download the complete datasheet for Infineon SPD04N60C3 to view detailed technical specifications.
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