Infineon
SPD04N60C3BTMA1
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
Power50W
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Technical Specifications
Infineon SPD04N60C3BTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4.5A
Drain to Source Voltage (Vdss)
600V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
490pF
Lead Free
Contains Lead
Max Dual Supply Voltage
600V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
50W
Rds On Max
950mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
58.5ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04N60C3BTMA1 Datasheet
Download the complete datasheet for Infineon SPD04N60C3BTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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