Single N-channel CoolMOS™ power MOSFET featuring 800V drain-source voltage and 1.3 Ohm on-state resistance. This surface-mount TO-252-3 packaged component offers a continuous drain current of 4A and a maximum power dissipation of 63W. Key switching characteristics include a 25ns turn-on delay and a 12ns fall time, with input capacitance at 570pF. Operating temperature range spans from -55°C to 150°C, and the device is RoHS compliant.
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Infineon SPD04N80C3ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 570pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 1.3R |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 63W |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| RoHS | Compliant |
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