Single N-channel CoolMOS™ power MOSFET featuring 800V drain-source voltage and 1.3 Ohm on-state resistance. This surface-mount TO-252-3 packaged component offers a continuous drain current of 4A and a maximum power dissipation of 63W. Key switching characteristics include a 25ns turn-on delay and a 12ns fall time, with input capacitance at 570pF. Operating temperature range spans from -55°C to 150°C, and the device is RoHS compliant.
PackageTO-252-3
Current Rating4A
MountingSurface Mount
Power63W
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Technical Specifications
Infineon SPD04N80C3ATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
800V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
570pF
Lead Free
Contains Lead
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
1.3R
Package Quantity
2500
Packaging
Tape and Reel
Power Dissipation
63W
Rds On Max
1.3R
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Infineon SPD04N80C3ATMA1 Datasheet
Download the complete datasheet for Infineon SPD04N80C3ATMA1 to view detailed technical specifications.
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