The SPD04N80C3BTMA1 is a surface mount N-channel MOSFET with a maximum drain to source voltage of 800V and a continuous drain current of 4A. It features a fall time of 12ns and a gate to source voltage of 20V. The device is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is packaged in a TO-252 package and is available on tape and reel. The MOSFET is compliant with RoHS regulations and is part of the CoolMOS series.
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Infineon SPD04N80C3BTMA1 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 570pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 1.3R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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