N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 6.2A continuous drain current. Offers 750mΩ Rds(on) and 74W power dissipation. Designed with a 3V threshold voltage and fast switching characteristics, including 7ns turn-on delay and 10ns fall time. Packaged in a TO-252AA (DPAK) surface-mount package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C.
PackageTO-252-3
Current Rating6.2A
PolarityN-CHANNEL
Power74W
Quick Jump:
Technical Specifications
Infineon SPD06N60C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
6.2A
Current Rating
6.2A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
650V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
620pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
74W
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
52ns
Turn-On Delay Time
7ns
DC Rated Voltage
650V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD06N60C3 Datasheet
Download the complete datasheet for Infineon SPD06N60C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
