N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 6.2A continuous drain current. Offers 750mΩ Rds(on) and 74W power dissipation. Designed with a 3V threshold voltage and fast switching characteristics, including 7ns turn-on delay and 10ns fall time. Packaged in a TO-252AA (DPAK) surface-mount package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 650V |
| Width | 6.22mm |
| RoHS | Compliant |
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