N-channel power MOSFET, TO-252 package, designed for surface mounting. Features a 600V drain-source voltage (Vdss) and a continuous drain current (ID) of 6.2A. Offers a low on-state resistance (Rds On) of 750mΩ at a 10V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 74W. Includes fast switching characteristics with turn-on delay time of 7ns and fall time of 10ns.
PackageTO-252-3
Current Rating6.2A
MountingSurface Mount
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Technical Specifications
Infineon SPD06N60C3ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Resistance | 680mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 620pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| On-State Resistance | 750mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD06N60C3ATMA1 Datasheet
Download the complete datasheet for Infineon SPD06N60C3ATMA1 to view detailed technical specifications.
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