N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.9-ohm drain-source resistance (Rds On Max) and 83W maximum power dissipation. Designed for surface-mount applications, it comes in a TO-252AA package with a 3-pin configuration. Key switching characteristics include a 25ns turn-on delay and 8ns fall time, with a nominal gate-source voltage of 3V. This component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
PackageTO-252-3
Voltage800V
Current6A
Current Rating6A
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Technical Specifications
Infineon SPD06N80C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
6A
Current
6A
Current Rating
6A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
800V
Dual Supply Voltage
800V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
785pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Voltage
800V
DC Rated Voltage
800V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD06N80C3 Datasheet
Download the complete datasheet for Infineon SPD06N80C3 to view detailed technical specifications.
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