N-Channel Power MOSFET, 800V Vdss, 6A Continuous Drain Current, 900mΩ On-State Resistance. Features 83W Max Power Dissipation, 150°C Max Operating Temperature, and 785pF Input Capacitance. Packaged in TO-252 (DPAK-3) for surface mounting, supplied on tape and reel. This silicon, metal-oxide semiconductor FET offers fast switching with turn-on delay of 25ns and fall time of 8ns. RoHS compliant.
PackageTO-252
MountingSurface Mount
Power83W
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Technical Specifications
Infineon SPD06N80C3BTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 785pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 900mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD06N80C3BTMA1 Datasheet
Download the complete datasheet for Infineon SPD06N80C3BTMA1 to view detailed technical specifications.
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