N-Channel Power MOSFET, 800V Vdss, 6A Continuous Drain Current, 900mΩ On-State Resistance. Features 83W Max Power Dissipation, 150°C Max Operating Temperature, and 785pF Input Capacitance. Packaged in TO-252 (DPAK-3) for surface mounting, supplied on tape and reel. This silicon, metal-oxide semiconductor FET offers fast switching with turn-on delay of 25ns and fall time of 8ns. RoHS compliant.
PackageTO-252
MountingSurface Mount
Power83W
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Technical Specifications
Infineon SPD06N80C3BTMA1 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
6A
Drain to Source Voltage (Vdss)
800V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
785pF
Lead Free
Contains Lead
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
900mR
Package Quantity
2500
Packaging
Tape and Reel
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
900mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD06N80C3BTMA1 Datasheet
Download the complete datasheet for Infineon SPD06N80C3BTMA1 to view detailed technical specifications.
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