N-Channel Power MOSFET, 200V Vds, 7A continuous drain current, and 400mΩ Rds(on). Features a TO-252 surface-mount package, 40W power dissipation, and operates from -55°C to 175°C. Includes 10ns turn-on delay and 55ns turn-off delay.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power40W
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Technical Specifications
Infineon SPD07N20GBTMA1 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
200V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
2.41mm
Input Capacitance
530pF
Lead Free
Contains Lead
Length
6.73mm
Max Dual Supply Voltage
200V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
400mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
400mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
55ns
Turn-On Delay Time
10ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD07N20GBTMA1 Datasheet
Download the complete datasheet for Infineon SPD07N20GBTMA1 to view detailed technical specifications.
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