N-Channel Power MOSFET, 200V Vds, 7A continuous drain current, and 400mΩ Rds(on). Features a TO-252 surface-mount package, 40W power dissipation, and operates from -55°C to 175°C. Includes 10ns turn-on delay and 55ns turn-off delay.
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Infineon SPD07N20GBTMA1 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 530pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 400mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
| RoHS | Compliant |
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