N-channel power MOSFET featuring 600V drain-source breakdown voltage and 7.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 600mΩ Rds On and 650V DC rated voltage. Designed for efficient switching, it exhibits a 6ns turn-on delay and 7ns fall time. Encased in a TO-252AA (DPAK-3) package, this RoHS compliant component supports a maximum power dissipation of 83W and operates from -55°C to 150°C.
PackageTO-252-3
Current Rating7.3A
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPD07N60C3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.3A
Current Rating
7.3A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
2.41mm
Input Capacitance
790pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
6ns
DC Rated Voltage
650V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPD07N60C3 Datasheet
Download the complete datasheet for Infineon SPD07N60C3 to view detailed technical specifications.
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