Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN
Infineon SPD08P06PGXT technical specifications.
| Continuous Drain Current (ID) | 8.83A |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
No datasheet is available for this part.
