Infineon
SPD08P06PGXT
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN
MountingSurface Mount
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Technical Specifications
Infineon SPD08P06PGXT technical specifications.
General
| Continuous Drain Current (ID) | 8.83A |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD08P06PGXT Datasheet
Download the complete datasheet for Infineon SPD08P06PGXT to view detailed technical specifications.
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