Infineon
SPD30N03S2L10GBTMA1
Power Field-Effect Transistor, 30A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
Quick Jump:
Technical Specifications
Infineon SPD30N03S2L10GBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.55nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Package Quantity
2500
Packaging
Tape and Reel
Rds On Max
10mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
27ns
Turn-On Delay Time
6.1ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD30N03S2L10GBTMA1 Datasheet
Download the complete datasheet for Infineon SPD30N03S2L10GBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
