
The SPD30N03S2L10GBTMA1 is a 30A N-Channel MOSFET from Infineon, packaged in a TO-252-3. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is RoHS compliant and features a maximum power dissipation of 100W. It also has a maximum gate to source voltage of 20V and a maximum Rds on of 10mR.
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Infineon SPD30N03S2L10GBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.55nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 6.1ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPD30N03S2L10GBTMA1 to view detailed technical specifications.
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