Infineon
SPD30N03S2L20GBTMA1
Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
MountingSurface Mount
Power60W
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Technical Specifications
Infineon SPD30N03S2L20GBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
30V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
700pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
20mR
RoHS Compliant
No
Series
OptiMOS™
Turn-Off Delay Time
20ns
Turn-On Delay Time
6ns
Compliance
RoHS
Not CompliantNo
Datasheet
Infineon SPD30N03S2L20GBTMA1 Datasheet
Download the complete datasheet for Infineon SPD30N03S2L20GBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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