P-channel MOSFET, 60V drain-source breakdown voltage, 30A continuous drain current, and 75mΩ maximum on-state resistance. This silicon metal-oxide semiconductor field-effect transistor features a TO-252 package for surface mounting, operating between -55°C and 175°C. It offers a maximum power dissipation of 125W and includes fast switching characteristics with turn-on delay time of 13ns and fall time of 20ns.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon SPD30P06PGBTMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 69mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 1.535nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 75mR |
| Package Quantity | 2500 |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPD30P06PGBTMA1 Datasheet
Download the complete datasheet for Infineon SPD30P06PGBTMA1 to view detailed technical specifications.
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