P-channel MOSFET, 60V drain-source breakdown voltage, 30A continuous drain current, and 75mΩ maximum on-state resistance. This silicon metal-oxide semiconductor field-effect transistor features a TO-252 package for surface mounting, operating between -55°C and 175°C. It offers a maximum power dissipation of 125W and includes fast switching characteristics with turn-on delay time of 13ns and fall time of 20ns.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon SPD30P06PGBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
69mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
2.5mm
Input Capacitance
1.535nF
Lead Free
Contains Lead
Max Dual Supply Voltage
-60V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
On-State Resistance
75mR
Package Quantity
2500
Rds On Max
75mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
30ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPD30P06PGBTMA1 Datasheet
Download the complete datasheet for Infineon SPD30P06PGBTMA1 to view detailed technical specifications.
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