N-channel Power MOSFET with 650V drain-source voltage and 15A continuous drain current. Features 280mΩ maximum drain-source on-resistance and 156W maximum power dissipation. Operates within a -55°C to 150°C temperature range, with fast switching times including 32ns turn-on and 11ns fall times. Packaged in TO-262-3 for through-hole mounting, this RoHS and Halogen Free component offers lead-free construction.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPI15N65C3XKSA1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
15A
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
650V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
9.45mm
Input Capacitance
1.6nF
Lead Free
Lead Free
Length
10.2mm
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
280mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
70ns
Turn-On Delay Time
32ns
Width
4.5mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPI15N65C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPI15N65C3XKSA1 to view detailed technical specifications.
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