
N-channel Power MOSFET with 650V drain-source voltage and 15A continuous drain current. Features 280mΩ maximum drain-source on-resistance and 156W maximum power dissipation. Operates within a -55°C to 150°C temperature range, with fast switching times including 32ns turn-on and 11ns fall times. Packaged in TO-262-3 for through-hole mounting, this RoHS and Halogen Free component offers lead-free construction.
Infineon SPI15N65C3XKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 10.2mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 32ns |
| Width | 4.5mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPI15N65C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.