N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 190mΩ drain-to-source resistance and 208W maximum power dissipation. Designed for efficient switching, it exhibits a 10ns turn-on delay and 4.5ns fall time. Packaged in a TO-262-3 (I²PAK) plastic housing, this RoHS compliant component operates from -55°C to 150°C.
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Infineon SPI21N50C3 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 11.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.45mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 560V |
| Width | 4.52mm |
| RoHS | Compliant |
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