N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 21A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 190mΩ drain-to-source resistance and 208W maximum power dissipation. Designed for efficient switching, it exhibits a 10ns turn-on delay and 4.5ns fall time. Packaged in a TO-262-3 (I²PAK) plastic housing, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-262-3
Current Rating11.6A
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon SPI21N50C3 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
21A
Current Rating
11.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
500V
Fall Time
4.5ns
Gate to Source Voltage (Vgs)
20V
Height
9.45mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
190mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
67ns
Turn-On Delay Time
10ns
DC Rated Voltage
560V
Width
4.52mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPI21N50C3 Datasheet
Download the complete datasheet for Infineon SPI21N50C3 to view detailed technical specifications.
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