N-channel Power MOSFET, 500V Vdss, 21A continuous drain current, and 190mR Rds On. Features a TO-262 package for through-hole mounting, with a maximum power dissipation of 208W. Operates across a wide temperature range from -55°C to 150°C. This RoHS and Halogen Free component offers fast switching speeds with a 10ns turn-on delay and 4.5ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPI21N50C3XKSA1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
21A
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
500V
Fall Time
4.5ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
9.45mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
10.36mm
Max Dual Supply Voltage
500V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
190mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
67ns
Turn-On Delay Time
10ns
Width
4.52mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPI21N50C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPI21N50C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.