N-channel Power MOSFET, 500V Vdss, 21A continuous drain current, and 190mR Rds On. Features a TO-262 package for through-hole mounting, with a maximum power dissipation of 208W. Operates across a wide temperature range from -55°C to 150°C. This RoHS and Halogen Free component offers fast switching speeds with a 10ns turn-on delay and 4.5ns fall time.
Infineon SPI21N50C3XKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| Width | 4.52mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPI21N50C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.