Infineon
SPN01N60S5
Power Field-Effect Transistor, 0.3A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Power Field-Effect Transistor, 0.3A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon SPN01N60S5 technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 300mA |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 45ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon SPN01N60S5 Datasheet
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