N-Channel Power MOSFET, 800V Vds, 2A ID, 2.7 Ohm Rds(on). Features 25ns turn-on delay, 65ns turn-off delay, and 18ns fall time. Operates with a 3V threshold voltage and up to 20V Vgs. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package, rated for 42W power dissipation, and is RoHS compliant.
PackageTO-220-3
Current Rating2A
PolarityN-CHANNEL
Power42W
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Technical Specifications
Infineon SPP02N80C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2A
Current Rating
2A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
2.7R
Drain to Source Voltage (Vdss)
800V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.95mm
Input Capacitance
290pF
Lead Free
Contains Lead
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
2.7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
DC Rated Voltage
800V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP02N80C3 Datasheet
Download the complete datasheet for Infineon SPP02N80C3 to view detailed technical specifications.
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