N-Channel Power MOSFET, 800V Vds, 2A ID, 2.7 Ohm Rds(on). Features 25ns turn-on delay, 65ns turn-off delay, and 18ns fall time. Operates with a 3V threshold voltage and up to 20V Vgs. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package, rated for 42W power dissipation, and is RoHS compliant.
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Infineon SPP02N80C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 290pF |
| Lead Free | Contains Lead |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| Width | 4.57mm |
| RoHS | Compliant |
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