N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 6.2A continuous drain current. Offers a low 750mΩ Rds(on) for efficient power switching. Designed with a TO-220AB package for through-hole mounting, this silicon metal-oxide semiconductor FET boasts fast switching characteristics with a 7ns turn-on delay and 10ns fall time. Maximum power dissipation is rated at 74W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power74W
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Technical Specifications
Infineon SPP06N60C3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6.2A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
650V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
620pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Through Hole
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
74W
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
52ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPP06N60C3 Datasheet
Download the complete datasheet for Infineon SPP06N60C3 to view detailed technical specifications.
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