N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 6.2A continuous drain current. Offers a low 750mΩ Rds(on) for efficient power switching. Designed with a TO-220AB package for through-hole mounting, this silicon metal-oxide semiconductor FET boasts fast switching characteristics with a 7ns turn-on delay and 10ns fall time. Maximum power dissipation is rated at 74W, with operating temperatures ranging from -55°C to 150°C.
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Infineon SPP06N60C3 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 620pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
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