N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 650V DC rated voltage. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 7.3A and a low on-resistance of 600mΩ. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Key switching characteristics include a 6ns turn-on delay and 7ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon SPP07N60C3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon SPP07N60C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.3A |
| Current Rating | 7.3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPP07N60C3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
