N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 650V DC rated voltage. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 7.3A and a low on-resistance of 600mΩ. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Key switching characteristics include a 6ns turn-on delay and 7ns fall time.
PackageTO-220-3
Current Rating7.3A
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPP07N60C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.3A
Current Rating
7.3A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
790pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
83W
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
6ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP07N60C3 Datasheet
Download the complete datasheet for Infineon SPP07N60C3 to view detailed technical specifications.
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