N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 7.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 600mΩ Rds On and 650V DC rated voltage. Designed for efficient power switching, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Packaged in a TO-220-3 configuration, this component is RoHS compliant.
PackageTO-220-3
Current Rating7.3A
PolarityN-CHANNEL
Power82W
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Technical Specifications
Infineon SPP07N60S5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.3A
Current Rating
7.3A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
650V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
9.45mm
Input Capacitance
970pF
Lead Free
Contains Lead
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
82W
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
4.5V
Turn-Off Delay Time
170ns
Turn-On Delay Time
120ns
DC Rated Voltage
650V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP07N60S5 Datasheet
Download the complete datasheet for Infineon SPP07N60S5 to view detailed technical specifications.
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