N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 7.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 600mΩ Rds On and 650V DC rated voltage. Designed for efficient power switching, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 83W. Packaged in a TO-220-3 configuration, this component is RoHS compliant.
Sign in to ask questions about the Infineon SPP07N60S5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon SPP07N60S5 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.3A |
| Current Rating | 7.3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.45mm |
| Input Capacitance | 970pF |
| Lead Free | Contains Lead |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 82W |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 120ns |
| DC Rated Voltage | 650V |
| Width | 4.57mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPP07N60S5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
