N-channel power MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 0.38 ohm Rds On. Features a 125W power dissipation and operates within a -55°C to 150°C temperature range. Packaged in a TO-220AB, this silicon metal-oxide semiconductor FET offers a 5ns fall time and 10ns turn-on delay.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Current | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.4mm |
| Input Capacitance | 1.2nF |
| Length | 8.64mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 10ns |
| Voltage | 600V |
| Width | 10.26mm |
| RoHS | Compliant |
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