N-channel power MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 0.38 ohm Rds On. Features a 125W power dissipation and operates within a -55°C to 150°C temperature range. Packaged in a TO-220AB, this silicon metal-oxide semiconductor FET offers a 5ns fall time and 10ns turn-on delay.
PackageTO-220-3
Voltage600V
Current11A
PolarityN-CHANNEL
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Technical Specifications
Infineon SPP11N60C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Current
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
4.4mm
Input Capacitance
1.2nF
Length
8.64mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Turn-Off Delay Time
44ns
Turn-On Delay Time
10ns
Voltage
600V
Width
10.26mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP11N60C3 Datasheet
Download the complete datasheet for Infineon SPP11N60C3 to view detailed technical specifications.
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