INFINEON

SPP11N80C3XKSA1

Datasheet

800V 11A N-Ch MOSFET, 450mR Rds On, TO-220

Infineon

SPP11N80C3XKSA1

Name: SPP11N80C3XKSA1 Infineon
Brand: Infineon
SKU: SPP11N80C3XKSA1

800V 11A N-Ch MOSFET, 450mR Rds On, TO-220

N-Channel Power MOSFET, 800V Vds, 11A Continuous Drain Current, 450mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting. Key specifications include 156W power dissipation, 1.6nF input capacitance, and fast switching times with a 7ns fall time. Designed for high voltage applications, it operates from -55°C to 150°C and is RoHS compliant.

PackageTO-220

Current Rating11A

MountingThrough Hole

Power156W

Quick Jump:

Technical Specifications

Infineon SPP11N80C3XKSA1 technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	11A
Current Rating	11A
Drain to Source Resistance	390mR
Drain to Source Voltage (Vdss)	800V
Dual Supply Voltage	800V
Fall Time	7ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Height	9.45mm
Input Capacitance	1.6nF
Lead Free	Lead Free
Length	10.36mm
Max Dual Supply Voltage	800V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	156W
Mount	Through Hole
Nominal Vgs	3V
Number of Elements	1
On-State Resistance	450mR
Package Quantity	500
Packaging	Rail/Tube
Power Dissipation	156W
Rds On Max	450mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	CoolMOS™
Termination	Through Hole
Threshold Voltage	3V
Turn-Off Delay Time	72ns
Turn-On Delay Time	25ns
DC Rated Voltage	800V
Width	4.57mm