N-Channel Power MOSFET featuring 800V drain-to-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.29ohm and a maximum power dissipation of 227W. Packaged in a TO-220-3 configuration, it boasts fast switching speeds with a 25ns turn-on delay and 6ns fall time. Operating across a wide temperature range from -55°C to 150°C, this component is RoHS and Halogen Free compliant.
PackageTO-220-3
Voltage800V
Current17A
Current Rating17A
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Technical Specifications
Infineon SPP17N80C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Current | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 2.3nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Voltage | 800V |
| DC Rated Voltage | 800V |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP17N80C3 Datasheet
Download the complete datasheet for Infineon SPP17N80C3 to view detailed technical specifications.
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