N-Channel Power MOSFET featuring 800V drain-to-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.29ohm and a maximum power dissipation of 227W. Packaged in a TO-220-3 configuration, it boasts fast switching speeds with a 25ns turn-on delay and 6ns fall time. Operating across a wide temperature range from -55°C to 150°C, this component is RoHS and Halogen Free compliant.
PackageTO-220-3
Voltage800V
Current17A
Current Rating17A
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Technical Specifications
Infineon SPP17N80C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Current
17A
Current Rating
17A
Drain to Source Voltage (Vdss)
800V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
9.45mm
Input Capacitance
2.3nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
227W
Packaging
Rail/Tube
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Voltage
800V
DC Rated Voltage
800V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP17N80C3 Datasheet
Download the complete datasheet for Infineon SPP17N80C3 to view detailed technical specifications.
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