N-channel power MOSFET featuring 800V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 290mΩ (max) and a maximum power dissipation of 208W. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and a 6ns fall time. The component is RoHS compliant and halogen-free.
PackageTO-220
Current Rating17A
MountingThrough Hole
Power208W
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Technical Specifications
Infineon SPP17N80C3XKSA1 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
800V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
2.32nF
Lead Free
Lead Free
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Through Hole
Number of Elements
1
On-State Resistance
290mR
Package Quantity
500
Packaging
Rail/Tube
Power Dissipation
208W
Radiation Hardening
No
Rds On Max
290mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP17N80C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP17N80C3XKSA1 to view detailed technical specifications.
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