N-channel power MOSFET featuring 800V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 290mΩ (max) and a maximum power dissipation of 208W. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and a 6ns fall time. The component is RoHS compliant and halogen-free.
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Infineon SPP17N80C3XKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.32nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 290mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 800V |
| RoHS | Compliant |
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