Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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Infineon SPP20N60C2 technical specifications.
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 350mA |
| Current Rating | 20A |
| Drain to Source Voltage (Vdss) | 240V |
| Input Capacitance | 108pF |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 6R |
| RoHS Compliant | No |
| Series | SIPMOS® |
| DC Rated Voltage | 650V |
| RoHS | Not Compliant |
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