N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 20A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 190mΩ drain-to-source resistance at a nominal gate-source voltage of 4.5V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 208W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 120ns turn-on delay and 30ns fall time.
PackageTO-220-3
Current Rating20A
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon SPP20N60S5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 3nF |
| Lead Free | Contains Lead |
| Length | 8.64mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Nominal Vgs | 4.5V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 120ns |
| DC Rated Voltage | 650V |
| Width | 10.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP20N60S5 Datasheet
Download the complete datasheet for Infineon SPP20N60S5 to view detailed technical specifications.
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