N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 20A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 190mΩ drain-to-source resistance at a nominal gate-source voltage of 4.5V. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 208W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 120ns turn-on delay and 30ns fall time.
PackageTO-220-3
Current Rating20A
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon SPP20N60S5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
20A
Current Rating
20A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
600V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
4.4mm
Input Capacitance
3nF
Lead Free
Contains Lead
Length
8.64mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Nominal Vgs
4.5V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Threshold Voltage
4.5V
Turn-Off Delay Time
140ns
Turn-On Delay Time
120ns
DC Rated Voltage
650V
Width
10.26mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP20N60S5 Datasheet
Download the complete datasheet for Infineon SPP20N60S5 to view detailed technical specifications.
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